Sram IC

The DS1230 256k Nonvolatile SRAMs have a total capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM is equipped with a self-contained lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this happens, the lithium energy source is automatically turned on, and write protection is enabled unconditionally to prevent data corruption. Existing 32k × 8 static RAMs directly complying to the common byte wide 28-pin DIP standard can be replaced with DS1230 DIP-package devices. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward replacement while improving performance. The Low Profile Module bundle contains DS1230 devices that are specifically tailored for surface-mount applications.There is no limit to the number of write cycles that can be performed, and microprocessor interface does not necessitate any additional support hardware.

The ISSI IS62C256AL/IS65C256AL is a low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI's high-performance, low power CMOS tech-nology.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down to 150 μW (typical) at CMOS input levels.Easy memory expansion is provided by using an activeLOW Chip Select (CE) input and an active LOW OutputEnable (OE) input. The active LOW Write Enable (WE)controls both writing and reading of the memory.The IS62C256AL/IS65C256AL is pin compatible withother 32Kx8 SRAMs in plastic SOP or TSOP (Type I)package

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.