|Package||28 DIP PIN AND 34 DIP PIN|
|Temperature||0 DegreeC to 70 DegreeC, -40 DegreeC to +85 DegreeC|
|Voltage||-0.3V to +7.0V|
The DS1230 256k Nonvolatile SRAMs have a total capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM is equipped with a self-contained lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this happens, the lithium energy source is automatically turned on, and write protection is enabled unconditionally to prevent data corruption. Existing 32k × 8 static RAMs directly complying to the common byte wide 28-pin DIP standard can be replaced with DS1230 DIP-package devices. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward replacement while improving performance. The Low Profile Module bundle contains DS1230 devices that are specifically tailored for surface-mount applications.There is no limit to the number of write cycles that can be performed, and microprocessor interface does not necessitate any additional support hardware.