Adinath Electronics

The interface that connects a CAN protocol controller to the physical bus is the PCA82C250. The apparatus offers differential transmit and receive capabilities to the CAN controller and bus, respectively.

The internal counters of the MCP7941X Real-Time Clock/Calendar (RTCC) measure hours, minutes, seconds, days, months, years, and days of the week. On every counter, alarms can be set for as long as many months. The MCP7941X supports I2C connections up to 400 kHz for usage and setup. The multifunctional, open-drain output may be set up to produce a square wave at a specified frequency, assert on an alarm match, or be used as a general-purpose output. The MCP7941X is intended to be used with external crystal load capacitors and a 32.768 kHz tuning fork crystal. Temperature and crystal tolerance can create frequency variation, which can be compensated for using on-chip digital editing.

The DS1225Y 64K Nonvolatile SRAM is a 65,536–bit nonvolatile RAM that is structured as 8192 words by 8 bits and is totally static. Each NV SRAM is equipped with a self–contained lithium energy source and control circuitry that continuously monitors VCC for out–of–tolerance conditions. When this happens, the lithium energy source is turned on immediately, and write protection is enabled unconditionally to prevent data corruption. The NVSRAM can be used to replace existing 8K × 8 SRAMs that are natively compatible with the common byte wide 28–pin DIP standard.The pinout of the DS1225Y matches that of the 2764 EPROM or 2864 EEPROM, allowing for straightforward replacement while improving performance. There is no limit to the number of write cycles that can be performed, and microprocessor interface does not necessitate any additional support hardware.

The DS1230 256k Nonvolatile SRAMs have a total capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM is equipped with a self-contained lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this happens, the lithium energy source is automatically turned on, and write protection is enabled unconditionally to prevent data corruption. Existing 32k × 8 static RAMs directly complying to the common byte wide 28-pin DIP standard can be replaced with DS1230 DIP-package devices. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward replacement while improving performance. The Low Profile Module bundle contains DS1230 devices that are specifically tailored for surface-mount applications.There is no limit to the number of write cycles that can be performed, and microprocessor interface does not necessitate any additional support hardware.

The ISSI IS62C256AL/IS65C256AL is a low power,32,768 word by 8-bit CMOS static RAM. It is fabricatedusing ISSI's high-performance, low power CMOS tech-nology.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down to 150 μW (typical) at CMOS input levels.Easy memory expansion is provided by using an activeLOW Chip Select (CE) input and an active LOW OutputEnable (OE) input. The active LOW Write Enable (WE)controls both writing and reading of the memory.The IS62C256AL/IS65C256AL is pin compatible withother 32Kx8 SRAMs in plastic SOP or TSOP (Type I)package

The M48Z08/18 ZEROPOWER® RAM is an 8K x8 non-volatile static RAM which is pin and func-tional compatible with the DS1225. The monolithicchip is available in two special packages to providea highly integrated battery backed-up memory so-lution

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.

The DS1220Y 16k Nonvolatile SRAM is a fully static, 16,384-bit nonvolatile RAM that is structured as 2048words by 8 bits. Each NV SRAM is equipped with a self-contained lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this happens, the lithium energy source is automatically turned on, and write protection is engaged unconditionally to safeguard data from corruption. Existing 2k x 8 SRAMs directly complying to the common byte wide 24-pin DIP standard can be replaced with the NV SRAM. The pinout of the DS1220Y matches that of the 2716 EPROM or 2816 EEPROM, allowing for straightforward replacement while improving performance. There is no restriction on the number of write cycles that can be performed, and no additional support circuitry is required for microprocessor interfacing

The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable pro-cess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.When CE1 is HIGH or CE2 is LOW (deselected), the deviceassumes a standby mode at which the power dissipationcan be reduced by using CMOS input levels.Easy memory expansion is provided by using two ChipEnable inputs, CE1 and CE2. The active LOW Write Enable(WE) controls both writing and reading of the memory