Product Details:
Part Number | FDN337N |
Maximum Drain Source Resistance | 65 mOhms |
Maximum Operating Temperature | + 150 C |
Brand | On Semiconductor |
Channel Type | N-Channel |
Maximum Gate Source Voltage | + 8 V |
Maximum Continuous Drain Current | 30 V |
Mounting Type | SMD/SMT |
We also have FDN305N & FDN339N availabe with us
General Description of the FDN337N N-Channel Logic Level Enhancement Mode Field Effect TransistorON Semiconductor's patented, high cell density, DMOS technology is used to manufacture SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors. This ultra-high density technique is specifically designed to reduce on-state resistance. These devices are ideal for low voltage applications in desktop computers, portable phones, PCMCIA cards, and other battery-powered circuits that require quick switching and minimal in-line power loss in a very compact shape surface mount package.