|Maximum Drain Source Resistance||65 mOhms|
|Maximum Operating Temperature||+ 150 C|
|Maximum Gate Source Voltage||+ 8 V|
|Maximum Continuous Drain Current||30 V|
We also have FDN305N & FDN339N availabe with us
General Description of the FDN337N N-Channel Logic Level Enhancement Mode Field Effect TransistorON Semiconductor's patented, high cell density, DMOS technology is used to manufacture SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors. This ultra-high density technique is specifically designed to reduce on-state resistance. These devices are ideal for low voltage applications in desktop computers, portable phones, PCMCIA cards, and other battery-powered circuits that require quick switching and minimal in-line power loss in a very compact shape surface mount package.