Mosfet Transistor

All the products from IRFB mosfet series are available with us at best price.
IRFB9N65APBFBE3  IRFB9N60APBFBE3  
IRFB17N50LPBF      IRFB9N65APBF  
IRFB9N60APBF        IRFB11N50APBF
IRFB20N50KPBF      IRFB13N50APBF  
IRFB18N50KPBF      IRFB20N50K 

All these products are availabe in DIP

IRFB4110 IRFB4110GPBF IRFB4110PBF 
Description

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead Free

RoHS Compliant, Halogen-Free

All these products are available in DIP

IRFZ44  IRFZ44ESTRLPBF
IRFZ44VPBF IRFZ44NPBF 
IRFZ44RPBF IRFZ44ZPBF
IRFZ44STRLPBF  IRFZ44RPBF-BE3
IRFZ44PBF-BE3 IRFZ44SPBF 
IRFZ44NSTRLPBF IRFZ44NLPBF
IRFZ44EPBF  IRFZ44VZPBF
IRFZ44PBF  IRFZ44ZLPBF 
IRFZ44ZSTRRPBF IRFZ44VZSPBF 
IRFZ44ESTRRPBF 

All these products are  availabe with us in DIP 
IRF540 IRF540ZPBF
IRF540NPBF        IRF540PBF-BE3 
IRF540PBF          IRF540SPBF 
IRF540STRLPBF   IRF540ZLPBF
IRF540STRRPBF  IRF540NSTRLPBF
AUIRF540Z         IRF540NSTRRPBF 
IRF540NLPBF      STP14NF10
STP24NF10  

All the products from IRF mosfet series are available with us at best price.

IRFP27N60KPBF  IRFP17N50LPBF  IRFP23N50LPBF 
IRFP440PBF  IRFP260PBF  IRFP350LCPBF  IRFP448PBF  
IRFP26N60LPBF  IRFP054PBF  IRFP460LCPBF  IRFP244PBF 
IRFP254PBF  IRFP360LCPBF  IRFP150PBF  IRFP048PBF 
IRFP064PBF  IRFP250PBF  IRFP264PBF IRFP140PBF 
IRFP21N60LPBF  IRFP340PBF  IRFP240PBF  IRFP460BPBF 
IRFP460PBF   IRFP9240PBF IRFP9140PBF  IRFP22N60KPBF
IRFP450APBF  IRFP460APBF  IRFP360PBF  IRFP32N50KPBF
IRFP31N50LPBF  IRFP450PBF IRFP22N50APBF  IRFP450LCPBF
IRFP350PBF  IRFP048RPBF  IRFP27N60K

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications

FDN306P/FDN338P/FDN340P/FDN358P/FDN360P/FDN357P
 are also availabe with us
General Information
Onsemi's innovative low voltage POWERTRENCH technology is used in this PChannel 1.8 V MOSFET. It has been designed with battery power management applications in mind.
Features
• 2.4 A, 20 V RDS(ON) = 52 m @ VGS = 4.5 V RDS(ON) = 70 m @ VGS = 2.5 V RDS(ON) = 100 m @ VGS = 1.8 V
• Fast Switching
• High Efficiency Trench Technology for Exceptionally Low RDS (ON)
• SUPERSOT23 has a lower RDS (ON) and a higher power handling capability than SOT23 in the same footprint.
• These devices are RoHS compliant and free of Pb, Halogens, and BFRs.
Applications
• Battery Administration
• Load Transfer Switch
• Battery Security

Type Designator: DOP80NF55-06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO220

The high voltage UniFET MOSFET series uses DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Lifetime control has improved the UniFET FRFET MOSFET's body diodes reverse recovery ability. While most planar MOSFETs have a trr of over 200ns and a reverse dv/dt immunity of 4.5V/ns, this device has a trr of less than 100ns. Therefore, in some situations where the performance of the MOSFET body diode is crucial, it may be used to eliminate an extra component and increase system dependability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.

The IRF840 series of high voltage MOSFETs is a new generation that uses a cutting edge charge balance mechanism for exceptional low on resistance and reduced gate charge performance This cutting edge technology is designed to reduce conduction loss offer greater switching performance endure extremely high dv dt rates and withstand larger avalanche energies For system miniaturisation and increased efficiency switching mode operation makes it ideal for a variety of AC DC power conversion

Doingter s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

Doingter s s Fifth Generation HEXFETs use cutting edge manufacturing methods to provide exceptionally low on resistance per silicon area This feature offers the designer a highly effective and dependable device for usage in a range of applications in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for For commercial and industrial applications where TO 220 devices cannot be used due to greater power levels the TO 247 package is suggested Because of its isolated mounting hole the TO 247 is comparable to the older TO 218 package but is better

The high voltage UniFET TM MOSFET series from Fairchild Semiconductor is based on DMOS and planar stripe technology.This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. This series of devices is appropriate for switching power converter uses such power factor correction (PFC), flat-panel display (FPD) TV power, ATX, and electronic lamp ballasts.

Vishay s third generation Power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For commercial and industrial applications where TO 220AB devices cannot be used due to greater power levels the TO 247AC package is chosen Because of its isolated mounting hole the TO 247AC is comparable to the older TO 218 package but is better Additionally it offers a wider creepage distance between pins to satisfy the demands of the majority of safety criteria

The 50N06 offers exceptional RDS ON at a low gate charge using cutting edge trench technology and design It may be applied to a wide range of situations Features AdvancedTrenchTechnology ExcellentRDS ON andLowGateCharge Leadfreeproductisacquired Application Charge Switch PWMApplication Powermanagement

Established in the year 2016 at Mumbai Maharashtra we Adinath Electronics are a Sole Proprietorship based firm engaged as the foremost Wholesale Supplier and Importer of SMD Resistors PCB Connector etc Our products are high in demand due to their premium quality and affordable prices Furthermore we ensure to timely deliver these products to our clients through this we have gained a huge clients base in the market we are importing our products from Taiwan Singapore and Malaysia

An N-channel power MOSFET transistor is the IRF120. It's an enhancement mode power field effect transistor made of silicon gates. It is a semiconductor device that is frequently used to switch and amplify signals in electrical equipment.

The IXGH72N60A3 is a 600V, 75A, 540W IGBT transistor from IXYS. It's part of the Littelfuse family of Punch Through (PT) IGBTs, which are optimized for higher speed applications up to 100kHz. The IXGH72N60A3 has low conduction losses, very fast switching, and high gain. It's well suited for applications that require switching frequencies up to 5kHz

A single N channel power MOSFET with a low gate charge that enhances switching performance is the IRFB4321PBF from the HEXFET family It is appropriate for synchronous rectification with high efficiency in SMPS hard switched and high frequency circuits Reduced RDS ON lowers losses Switching and EMI performance are improved via improved diode recovery Improves robustness with 30V Gate voltage rating Avalanche with full characterization SOA