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Adinath Electronics
Adinath Electronics
Girgaon, Mumbai, Maharashtra
GST No. 27AANPB4301Q1ZK
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Mosfet Transistor

Offering you a complete choice of products which include fdn304p mosfet transistor, fdn337n mosfet transistor and irfb mosfet series.
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  • FDN304P Mosfet Transistor
  • FDN304P Mosfet Transistor
  • FDN304P Mosfet Transistor
  • FDN304P Mosfet Transistor
FDN304P Mosfet Transistor
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FDN304P Mosfet Transistor

Approx. Price: Rs 2 / PieceGet Latest Price
Product Brochure
Product Details:
BrandON SEMICONDUCTORS
Part NumberFND304P
Transistor TypePNP
Mounting TypeSMD
Maximum Operating Temperature+ 150 C
Maximum Power Dissipation500 mW
Gate Charge (Qg)20 nC
Drain Source Resistance52 mOhms
Package/CaseSSOT-3
FDN306P/FDN338P/FDN340P/FDN358P/FDN360P/FDN357P
 are also availabe with us
General Information
Onsemi's innovative low voltage POWERTRENCH technology is used in this PChannel 1.8 V MOSFET. It has been designed with battery power management applications in mind.
Features
• 2.4 A, 20 V RDS(ON) = 52 m @ VGS = 4.5 V RDS(ON) = 70 m @ VGS = 2.5 V RDS(ON) = 100 m @ VGS = 1.8 V
• Fast Switching
• High Efficiency Trench Technology for Exceptionally Low RDS (ON)
• SUPERSOT23 has a lower RDS (ON) and a higher power handling capability than SOT23 in the same footprint.
• These devices are RoHS compliant and free of Pb, Halogens, and BFRs.
Applications
• Battery Administration
• Load Transfer Switch
• Battery Security

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  • FDN337N Mosfet Transistor
  • FDN337N Mosfet Transistor
  • FDN337N Mosfet Transistor
  • FDN337N Mosfet Transistor
FDN337N Mosfet Transistor
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FDN337N Mosfet Transistor

Approx. Price: Rs 6 / PieceGet Latest Price
Product Brochure
Product Details:
Part NumberFDN337N
Maximum Drain Source Resistance65 mOhms
Maximum Operating Temperature+ 150 C
BrandOn Semiconductor
Channel TypeN-Channel
Maximum Gate Source Voltage+ 8 V
Maximum Continuous Drain Current30 V
Mounting TypeSMD/SMT
We also have FDN305N & FDN339N availabe with us 
General Description of the FDN337N N-Channel Logic Level Enhancement Mode Field Effect TransistorON Semiconductor's patented, high cell density, DMOS technology is used to manufacture SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors. This ultra-high density technique is specifically designed to reduce on-state resistance. These devices are ideal for low voltage applications in desktop computers, portable phones, PCMCIA cards, and other battery-powered circuits that require quick switching and minimal in-line power loss in a very compact shape surface mount package.

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  • IRFB Mosfet Series
  • IRFB Mosfet Series
  • IRFB Mosfet Series
  • IRFB Mosfet Series
  • IRFB Mosfet Series
  • IRFB Mosfet Series
IRFB Mosfet Series
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IRFB Mosfet Series

Approx. Price: Rs 25 / PieceGet Latest Price
Product Brochure
Product Details:
Minimum Order Quantity1000 Piece
BrandInfineon / IR / Vishay / Doingter
Part NumberIRFB
Transistor TypeNPN
Mounting TypeDIP
Maximum Operating Temperature+ 175 C
PackagingTUBE
All the products from IRFB mosfet series are available with us at best price.
IRFB9N65APBFBE3  IRFB9N60APBFBE3  
IRFB17N50LPBF      IRFB9N65APBF  
IRFB9N60APBF        IRFB11N50APBF
IRFB20N50KPBF      IRFB13N50APBF  
IRFB18N50KPBF      IRFB20N50K 


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