Adinath Electronics

A high voltage power MOSFET called the DOPF 14N65 combines advanced trench MOSFET to have improved features including quick switching times low gate charges low on state resistance and high robust avalanche properties The majority of the time switching power supplies and adaptors employ this power MOSFET in high speed switching applications

The majority of synchronous buck converter applications benefit greatly from the RDSON and gate charge of the 150N03 N ch MOSFETs which have an extremely high cell density Features 1 A Basic Drive Need 2 Quick Switching 3 Minimal On Resistance Applications 1 HIGH CURRENT AND HIGH SPEED SWITCHING 2 DC DC and DC AC CONVERTERS 3 AUDIO AMPLIFIERS AND MOTOR CONTROLS 4 RELAY AND SOLENOID DRIVERS 5 VEHICLE ENVIRONMENT

A through hole 200V N channel mesh overlay II power MOSFET in a TO 220 package is the IRF630 from STMicroelectronics The company s MESH OVERLAY method which is based on a consolidated strip layout and matches and enhances the performances was used to build this power MOSFET Features a very low inherent capacitance very high dv dt capabilities and little gate charge

The fifth generation HEXFET, the IRFR5305TRPBF, is a -55V single P-channel HEXFET® Power MOSFET that uses cutting edge processing methods to provide very low on-resistance per silicon area. This feature, together with the quick switching speed and ruggedized architecture for which HEXFET® power MOSFET is renowned, gives the designer a very dependable and efficient device that can be used in a broad range of applications. Vapour phase, infrared, or wave soldering methods can be used for surface attachment of the D-Pak.

A TO 220AB sized 30V N channel power MOSFET Benefits 1 Designed to maximise distribution partners reach 2 Product certification in accordance with JEDEC requirements 3 5V gate drive voltage optimised 4 The through hole power package is the industry standard 5 A package with high current carrying capacity

The cutting edge method used by Fairchild Semiconductor to create this N Channel MOSFET has been specifically designed to reduce the on state resistance while maintaining exceptional switching performance Features 1 VGS 10V ID 75A RDS on 8 2m Typ 2 Quick changeover time 3 Minimal entrance fee 4 Extremely low RDS on with high performance trench technology 5 High power handling and current handling 6 RoHS compliance

STW19NM50N is a high-voltage N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics, engineered for efficient and reliable switching in power electronics and high-efficiency converter circuits.

At its core, STW19NM50N uses second-generation MDmesh™ technology, which combines a vertical silicon structure with an optimized strip layout to achieve low on-resistance and low gate charge — key factors for improving both conduction efficiency and switching performance in power conversion designs. This makes it suitable for demanding applications such as offline switch-mode power supplies (SMPS), motor drives, inverters, and industrial control systems.

⚙️ Key Electrical Features

• Drain-to-Source Voltage (V_DSS): 500 V — high voltage capability ensures safe operation in circuits with substantial electrical stress.

• Continuous Drain Current (I_D): 14 A (at case temperature 25 °C) — supports solid current handling for medium power applications.

• Typical On-Resistance (R_DS(on)): ~250 mΩ @ 7 A, V_GS = 10 V — relatively low on-resistance reduces conduction losses, enhancing efficiency.

• Gate Threshold (V_GS(th)): ~4 V — defines the typical voltage at which the MOSFET begins to conduct.

• Gate Charge (Q_g): ~34 nC @ V_GS = 10 V — moderate gate charge helps lower switching losses and reduces driver power requirements.

• Input Capacitance (C_iss): ~1000 pF — relevant for dynamic switching performance.

• Maximum Gate-Source Voltage: ±25 V — safe limit for gate drive voltage.

• Power Dissipation: ~110 W (Tc) — supports significant power handling with proper heatsinking.

The device is housed in a TO-247-3 through-hole package, which offers good heat dissipation and easy thermal management (e.g., heatsink mounting) for high-power environments.

🧠 Performance & Build

STW19NM50N is 100% avalanche tested, indicating strong ruggedness against inductive and transient voltage spikes typical in switching applications. The MDmesh™ II design also delivers low gate input resistance and low input capacitance, contributing to efficient switching and easier gate driving, which is beneficial in high-frequency converter circuits.

🔌 Typical Applications

• Offline Switch-Mode Power Supplies (SMPS)

• DC-DC Converters & Inverters

• Motor Control and Drive Electronics

• Industrial Power Systems

• Renewable Energy Power Conversion

STW21NM60ND is a high-voltage N-channel power MOSFET from STMicroelectronics designed for robust and efficient switching in medium-power converter circuits. It belongs to ST’s FDmesh™ II series of MOSFETs — a technology that combines optimized vertical silicon structuring with a strip layout to deliver low conduction losses and strong switching performance — making it ideal for high-voltage power electronics uses.

🔌 Key Electrical Specifications

• Drain-to-Source Voltage (V_DSS): 600 V — capable of withstanding high voltage stress common in offline power supplies, industrial drives, and inverters.

• Continuous Drain Current (I_D): 17 A (at case temperature 25 °C) — supports moderate power handling in switched power stages.

• On-State Resistance (R_DS(on)): ~0.22 Ω (at V_GS = 10 V) — helps reduce conduction losses when the transistor is fully on.

• Power Dissipation: ~140 W (at case temperature) — suitable for sustained operation with heatsinking.

• Gate-Source Voltage (V_GS): ±25 V maximum — defines safe gate drive limits.

• Input Capacitance (C_iss): ~1800 pF @ 50 V – influences dynamic switching behavior.

• Gate Charge (Q_g): ~60 nC @ 10 V – moderate total gate charge helps balance drive requirements and switching speed.

• Operating Temperature: up to ~150 °C junction temperature — supports use in demanding thermal environments.

The device typically comes in a TO-247-3 through-hole package, which simplifies mounting and thermal management via heatsinks for high-power applications.

🧠 Technology & Performance

STW21NM60ND uses FDmesh™ II technology, ST’s refined MOSFET fabrication method that lowers on-resistance while maintaining strong voltage and temperature tolerance. This design offers 100% avalanche testing, indicating ruggedness against voltage transients and inductive switching stresses often seen in converter circuits. The device also features low input capacitance and gate resistance, which contribute to faster switching and lower drive energy requirements.

STW25N60M2-EP is a high-voltage N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by STMicroelectronics using MDmesh™ M2 Enhanced Performance (EP) technology — an advanced MOSFET design that delivers a strong balance of high-efficiency switching, ruggedness, and thermal handling for demanding power electronics applications.

At its core, this device is rated for a 600 V drain-to-source voltage (V_DSS), enabling it to operate safely in circuits with substantial voltage stress such as offline switch-mode power supplies (SMPS), industrial inverters, motor drives, and UPS systems. It supports a continuous drain current of up to 18 A (measured at case temperature), giving it solid current handling for medium-power switching duties. The MOSFET also features a typical on-state resistance (R_DS(on)) of around 0.175–0.188 Ω when driven with a 10 V gate voltage, which helps reduce conduction losses and improve overall system efficiency.

One of the key design strengths of STW25N60M2-EP is its use of MDmesh™ M2 EP technology, which combines an optimized vertical silicon structure with a refined strip layout to produce extremely low gate charge, excellent output capacitance (C_OSS) profile, and very low turn-off switching losses — critical properties in high-frequency converter designs (f > 150 kHz). This makes the MOSFET especially suited for high-efficiency, fast-switching applications where minimizing energy loss during each switching transition is important.

Thermal and ruggedness features include 100% avalanche testing and Zener-protected gate structures, which improve the device’s ability to tolerate voltage transients and inductive loads typical in SMPS and motor control circuits. It also supports a maximum gate-source voltage (V_GS) of ±25 V, and its operating temperature range spans from −55 °C up to approximately 150 °C junction temperature, helping ensure reliable performance under tough environmental and thermal conditions.

Packaged in a TO-247-3 through-hole case, STW25N60M2-EP can be mounted with heatsinks for effective thermal dissipation, making it a versatile choice for engineers working on high-voltage converters, inverters, DC-DC power stages, and industrial power electronics systems that demand both efficiency and robustness.

This Power MOSFET series was created using a special method developed by Doingter and it was particularly created to reduce gate charge and input capacitance Therefore it may be used as the principal switch in modern high efficiency isolated DC DC converters for applications in computers and telecom Additionally any application with minimal gate charge drive needs is suitable for it Features 1 Outstanding dv dt capabilities 2 An in depth avalanche test 3 Object based characterization for applications

Third generation power MOSFETs from Doingter s provide the designer with the best combination of fast switching ruggedized device design low on resistance and cost effectiveness The TO 220AB package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 W The low thermal resistance and low package cost of the TO 220AB contribute to its wide acceptance throughout the industry

The core to Doingter s s cutting edge range of power MOSFET transistors is the HEXFET technology This most recent State of the Art design offers better reverse energy and diode recovery dv dt capabilities very low on state resistance mixed with strong transconductance and efficient geometry and unique processing All of the well known benefits of MOSFETs including voltage control incredibly quick switching simple paralleling and temperature stability of the electrical characteristics are also present in the HEXFET transistors Applications include switching power supply motor controllers inverters helicopters audio amplifiers and high energy pulse circuits are good fits for them

Doingter s s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

This Power MOSFET series was created using a special method developed by Doingter and it was particularly created to reduce gate charge and input capacitance Therefore it may be used as the principal switch in modern high efficiency isolated DC DC converters for applications in computers and telecom Additionally any application with minimal gate charge drive needs is suitable for it Features 1 Totally avalanche tested 2 Low torque drive

a TO 247 packaged 100V single N Channel power MOSFET The low RDS on and high current capabilities of the power MOSFET family are optimised For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features 1 Designed to be as widely available as possible through distribution partners 2 Product certification in accordance with JEDEC requirements 3 through hole power supply of standard in the industry 4 A strong rating

The monolithic integrated circuits in the LM2576 series of regulators are perfect for the simple and practical construction of a step down switching regulator buck converter This series circuits can all drive 3 0 A loads with excellent line and load control These devices come with an adjustable output version in addition to fixed output voltages of 3 3 V 5 0 V 12 V and 15 V The LM2576 provides a guaranteed 4 output voltage tolerance within predetermined input voltages and output load circumstances as well as a 10 oscillator frequency tolerance 2 over 0 C to 125 C Included is an external shutdown with an 80 A typical standby current The output switch has thermal shutdown and cycle by cycle current limiting for complete protection in case of a failure

Doingter s s third generation Power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For commercial and industrial applications where TO 220AB devices cannot be used due to greater power levels the TO 247AC package is chosen Because of its isolated mounting hole the TO 247AC is comparable to the older TO 218 package but is better In order to satisfy the criteria of the majority of safety regulations it also offers higher creepage distances between pins

The TO 247 package contains a 100V single P channel power MOSFET The IR MOSFET series of power MOSFETs uses tried and true silicon manufacturing techniques to provide designers a large selection of products to serve a variety of applications including DC motors inverters SMPS lights load switches and battery powered ones For convenience of design the devices are offered in a range of surface mount and through hole packages with those footprints Features Synopsis Planar cell structure for extensive SOA Optimised for widest availability from distribution partners JEDEC compliant product qualification Through hole power package that is industry standard with silicon optimised for switching below 100 kHz high rating right now Benefits heightened toughness Industry standard certification level broad availability via distribution partners Exceptional performance in low frequency applications

Vishay s third generation Power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For commercial and industrial applications where TO 220AB devices cannot be used due to greater power levels the TO 247AC package is chosen Because of its isolated mounting hole the TO 247AC is comparable to the older TO 218 package but is better Additionally it offers a wider creepage distance between pins to satisfy the demands of the majority of safety criteria

Doingter s s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

The IRF9Z34 series of high voltage MOSFETs is a new generation that uses a cutting edge charge balance mechanism for exceptional low on resistance and reduced gate charge performance This cutting edge technology is designed to reduce conduction loss offer greater switching performance endure extremely high dv dt rates and withstand larger avalanche energies For system miniaturisation and increased efficiency switching mode operation makes it ideal for a variety of AC DC power conversion

In order to produce incredibly low on resistance per silicon area this HEXFET Power MOSFET makes use of the most recent manufacturing methods This design also has better repeating avalanche rating a 175 C junction working temperature and quick switching times These characteristics work together to provide a very effective and dependable design that may be used in a broad range of additional applications

Doingter s s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

A TO 220 packaged 75V single N Channel power MOSFET The StrongIRFETTM power MOSFET series is designed for high current capability and low RDS on For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features geared on maximizing distribution partners reach Product certification in accordance with JEDEC requirements typical through hole power supply A high rating currently Benefits a lot of options from distribution partners industry required educational level Drop in replacement is possible with standard pinout high carrying capacity for current

The third generation IRF640 power MOSFETs offer the optimum balance of quick switching ruggedized device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 150 W the TO 220AB package is always preferable

Power MOSFETs of the third generation from the designer that combine quick switching ruggedized device design low on resistance and affordability best For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

The IRFP4768PBF is a Trench MOSFET based 250V single N channel HEXFET Power MOSFET with a very low on resistance per silicon area and quick switching performance suitable for SMPS synchronous rectification with high efficiency UPS fast power switching hard switched and high frequency circuits 1 Enhanced dynamic dv dt avalanche and gate roughness 2 Avalanche and capacitance with complete characterization SOA 3 Improved dV dt and dI dt capacity for body diodes

Vishay s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

A TO 247 packaged 200V single channel Strong IRFETTM power MOSFET The StrongIRFETTM power MOSFET series is designed for high current capability and low RDS on For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features geared on maximising distribution partners reach JEDEC compliant product certification Through hole power package industry standard Benefits of a high current rating A lot of options from distribution partners industry required educational level Drop in replacement is possible with standard pinout high carrying capacity for current

A TO 247 packaged 150V single N Channel power MOSFET The low RDS on and high current capabilities of the power MOSFET family are optimised For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features 1 Designed to be as widely available as possible through distribution partners 2 Product certification in accordance with JEDEC requirements 3 through hole power supply of standard in the industry 4 A strong rating

Vishay s third generation Power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For commercial and industrial applications where TO 220AB devices cannot be used due to greater power levels the TO 247AC package is chosen Because of its isolated mounting hole the TO 247AC is comparable to the older TO 218 package but is better Additionally it offers a wider creepage distance between pins to satisfy the demands of the majority of safety criteria

Doingter s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer At power dissipation levels up to around 50 W the TO 220AB package of the IRFZ48 is widely recommended for all commercial and industrial applications The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

Customers may get planar stripe and DMOS technology from the DOPF 20N65 an N channel enhancement mode power MOSFET that uses UTC s cutting edge technology A minimal on state resistance and improved switching performance are two areas where this technology excels Additionally it is capable of withstanding high energy pulses in avalanche and commutation modes The DOPF 20N65 is used extensively in switch mode and resonant mode power supply UPS DC choppers and motor control

Advanced processing methods are used by IRF1404 Seventh Generation HEXFET Power MOSFETs to provide very low on resistance per silicon area This feature gives the designer a highly effective and dependable device for use in a range of applications including automotive in addition to the quick switching speed and ruggedized device design that HEXFET power MOSFETs are widely known for

The third generation of Doingter s special Single Feature SizeTM strip based technology is the P90NF03 Power MOSFET The resultant transistor exhibits the optimal trade off between gate charge and on resistance It performs best when employed as the high and low side in buck regulators in terms of both conduction and switching losses For motherboards where quick switching and great efficiency are essential P90NF03 N Channel Power MOSFET is crucial

DC DC converters with a high frequency Lead Free Reduce Switching Losses with Low Gate to Drain Charge Effective COSS and Fully Characterised Capacitance to Simplify Design Voltage and Current Characterised Avalanche in Full

This Power MOSFET series was created using Doingters specialised DOripFETTM technology and it was particularly created to reduce gate charge and input capacitance It is therefore appropriate for use as the principal switch in modern highly efficient high frequency isolated DC DC converters for applications in telecommunications and computing Additionally any applications with minimal gate drive requirements are suitable for it Features 1 Outstanding dv dt capabilities 2 a complete avalanche test

The third generation power MOSFETs from IRF730 offer the best price performance ratio low on resistance quick switching and ruggedized device design For all commercial and industrial applications with power dissipation levels up to around 74 W the TO 220AB package is always preferable

Doingter s s third generation power MOSFETs give designers the finest possible blend of quick switching durable device design low on resistance and affordability At power dissipation levels of up to 50 W the TO 220AB package is consistently selected for all commercial and industrial applications The TO 220AB s widespread adoption within the industry is a result of its low thermal resistance and affordable packaging

IRF1407 is This Stripe Planar design of HEXFET Power MOSFETs specifically created for Automotive applications makes use of the most recent processing processes to produce incredibly low on resistance per silicon area The 175 C junction operating temperature quick switching and increased repeating avalanche rating of this HEXFET power MOSFET are further characteristics Together these advantages make this design a very effective and dependable tool for use in a range of applications including automotive ones