Memory Ic

NOR Flash 64 Mbit, 3.0V (2.7V to 3.6V), -40C to 85C, SOIC-W 208mil (Tape & Reel), Single, Dual SPI NOR flash

The devices come with 72 KByte of on-chip flashEEPROM program memory which is partitioned into 2independent program memory blocks. The primary Block 0occupies 64 KByte of internal program memory space andthe secondary Block 1 occupies 8 KByte of internal pro-gram memory space

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

The SST25VF016B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF016B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.  

The AT24C32/64 provides 32,768/65,536 bits of serial electrically erasable and pro-grammable read only memory (EEPROM) organized as 4096/8192 words of 8 bitseach. The device’s cascadable feature allows up to 8 devices to share a common 2-wire bus. The device is optimized for use in many industrial and commercial applica-tions where low power and low voltage operation are essential. The AT24C32/64 isavailable in space saving 8-pin JEDEC PDIP, 8-pin and 14-pin JEDEC SOIC, 8-pinEIAJ SOIC, and 8-pin TSSOP packages and is accessed via a 2-wire serial interface.In addition, the entire family is available in 5.0V (4.5V to 5.5V), 2.7V (2.7V to 5.5V),2.5V (2.5V to 5.5V) and 1.8V (1.8V to 5.5V) versions