Transistors

We have all the below mentioned products available
BC548A        BC548B       BC548C  
BC549A         BC549B       BC549C
BC550A         BC550B       BC550C
BC556BTF      BC556ATA   BC556ABU
BC556BTFR    BC556BTA   BC557BTA
BC557ATA      BC557BTF   BC558A
BC558B         BC558C       BC559A
BC559B         BC559C       BC63916

All the products mentioned below are availabe with us:
BD140G     BD140-16    BD14010STU   BD14016S 
BD237       BD237G     BD239C         BD239CTU
BD677      BD677A   BD678              BD679
BD679G     BD679A      BD679AS       BD680
BD681      BD681G

2N6027 PBFREE  2N6027 APP PBFREE  

2N6027 TRA TIN/LEAD 2N6027 TRA PBFREE 

 2N6027 APP TIN/LEAD  2N6027 TRB PBFREE
 
2N6027 TRB TIN/LEAD  2N6027 TRE PBFREE

 2N6027 TIN/LEAD

Bipolar Transistors - BJT 40Vgkf 5.0Vgkr 40Vgar 40Vak 300mW

WE HAVE FULL RANGE  of Bipolar Transistors - BJT NPN High Volt Power

The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package. It is intended for switching and industrial applications from single and three-phase mains. 

DESCRIPTION Outstanding Safe Operating Area Collector Emitter Saturation Voltage VCE sat 1 1 V Max IC 4A For Surface Mount Applications Complement to Type MJD2955 DPAK Minimum lot to lot variability for dependable operation and strong device performance APPLICATIONS Designed for general purpose amplifier and slow switching applications

The TIP41C is an NPN power transistor with base island technology that comes in a TO 220 plastic box It may be used for switching power linear and audio applications TIP42C is the complementary PNP type A plastic power transistor called the TIP41C is made for switching and amplifier applications 100V for the collector emitter voltage and 65W for the collector dissipation 0 6 seconds for turn on A 1 4 second turn off delay

Power Transistors Surface Mount Applications DPAK The switching regulators converters and power amplifiers were designed for general purpose power and switching such as output or driver stages Features Plastic Sleeves with Lead Formed for Surface Mount Application The Straight Lead Version in Plastic Sleeves with the 1 Suffix Electrically Relative to the Well known D44H D45H Series Minimal Collector Emitter Saturation Voltage Quick switching times Complementary pairs make designs simpler Epoxy complies with UL 94 V 0 at 0 125 in AECQ101 Qualified and PPAP Capable NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These devices are RoHS compliant and free of pb halogens and BFRs

Insulated Gate N Channel Bipolar Transistor Features Switching at High Speed Saturation Voltage Is Low Type VCE sat 2 5V IC 40A Halogen and RoHS Compliant Free

For usage in high frequency drivers in audio amplifier applications the MJE15030 is a 150V NPN complementary power transistor 1 DC current gain at Ic 4A hfe 20 minimum 2 The minimum collector emitter sustaining voltage is 150V We deal in All kinds Transistors like PNP or NPN

Using Doingter s planar stripe DMOS technology power field effect transistors with the DOPF 10N80C N Channel enhancement mode are created In the avalanche and commutation modes this cutting edge technology has been specifically designed to reduce on state resistance deliver greater switching performance and withstand high energy pulses These devices are particularly suited for active power factor correction high efficiency switching mode power supply and electronic light ballasts using a half bridge topology

The MJE2955T is a hermetically sealed metal box that holds a general purpose PNP power transistor with an epitaxial base The goal of this gadget is to serve as a switching and amplifier device all around Feature MJE2955T 1 DC A maximum of 10 amps is given for current gain 2 High Current Gain Bandwidth 3 MJE2955T Type Designator Product 2 0 MHz Min at 500 mAdc for the IC 4 PNP for Si Polarity Transistor Material 5 5 V is the maximum Emitter Base Voltage

We deal in All kinds Transistors like PNP or NPN We deal in all types of transistors such as PNP and NPN Silicon plastic power transistors that complement each other A high frequency driver is a component of audio amplifiers COMPLEMENTARY SILICON POWER TRANSISTORS 8 0 A 250 V 50 W Features Epoxy meets UL 94 V0 0 125 in High DC Current Gain High Current Gain Bandwidth Product TO220 Compact Package These devices are RoHS compliant and Pb free

Product XS4202 20Ampere,200Volt Insulated Fast Recovery Diode for Welding MachinePb
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current

We have TIP31C TIP32C TIP35C TIP41C TIP42C  also availabe in stock 

A line of bipolar junction transistors produced by Texas Instruments is referred to as Texas Instruments Power, more commonly known by the acronym TIP. Due to their simplicity, longevity, and usability, the series, debuted in the 1960s, is still in some usage today. The TIP04 and TIP14 part numbers are listed in a 1966 Texas Instruments catalogue.

full series is availalbe with us at best price and in ready stock all over india delivery availblae 

Each of the ULN2801A, ULN2802A, ULN2803A, and ULN2804A models has eight Darlington transistors with common emitters and built-in inductive load suppression diodes. Each Darlington can tolerate at least 50 V in the OFF state and has a peak load current rating of 600 mA (500 mA continuous). Parallelizing the outputs will increase current capacity.

We deal in all kind of Transistors and Diodes

Seven open collector Darlington pairs with common emitters are included in each of the high-voltage, high-current Darlington arrays known as ULN2001, ULN2002, ULN2003, and ULN2004. Each channel is capable of withstanding peak currents of 600 mA and is rated at 500 mA. For inductive load driving, suppression diodes are added, and the inputs are pinned opposite the outputs to simplify board layout.

Each of the high voltage high current Darlington arrays known as ULN2001 ULN2002 ULN2003 and ULN 2004 has seven open collector Darlington pairs with common emitters Each channel is capable of withstanding peak currents of 600 mA and is rated at 500 mA For inductive load driving suppression diodes are added and the inputs are pinned opposite the outputs to simplify board layout Solenoids relay DC motors LED display filament lamps thermal printheads and high power buffers are just a few of the various loads that these adaptable devices may drive

It has a low collector emitter saturation voltage and is a complementary PNP power transistor known as the TIP147 It is produced using planar technology and has an island basis The transistor produced as a consequence has outstanding high gain performance and extremely low saturation voltage For use in switching and linear industrial applications 1 The monolithic Darlington configuration 2 An integrated collector emitter diode 3 Base current of 0 5A 4 1 C W Thermal resistance from a junction to a case

These arrays' seven NPN transistors with Darlington connections are ideally suited for operating lighting, relays, or printing hammers in a range of commercial and residential applications. Due to its high breakdown voltage and inbuilt suppression diodes, inductive load-related issues are completely eliminated. They can drive incandescent bulbs with peak inrush currents up to 500 mA. Systems utilising a 5.0 V TTL or CMOS Logic are ideally suited for the MC1413, B with a 2.7 k series input resistor.