Transistors

We have the below mentioned products available:
BD139G   BD139-10   BD135   BD135G  
BD136     BD136G    

2N6027 PBFREE  2N6027 APP PBFREE  

2N6027 TRA TIN/LEAD 2N6027 TRA PBFREE 

 2N6027 APP TIN/LEAD  2N6027 TRB PBFREE
 
2N6027 TRB TIN/LEAD  2N6027 TRE PBFREE

 2N6027 TIN/LEAD

Bipolar Transistors - BJT 40Vgkf 5.0Vgkr 40Vgar 40Vak 300mW

BC547 has Power dissipation 500 mW
BC547 comes in Plastic case TO-92
Maximum Rating of BC547 is (TA =  25°C)
50V is the Collecter-Emitter-Voltage Of BC547 when E-B short, When B is open BC547 has Collecter-Emitter-Voltage of 45V and when E is open BC547 has 50V of Collecter-emitter-voltage.
The Emitter Base Voltage of BC547 is 5V. BC547 has collecter current capacity of 100mA. The Junction and storage temperature of BC547 is -55 C to +150C . BC547 has a reverse voltage transfer ration of typ. 2*10-4

A silicon epitaxial base NPN transistor in a Jedec TO 220 packaging is the MJE3055T It is designed for general purpose amplifiers and power switching circuits MJE2955T is the complimentary PNP type 1 Used in conjunction with the MJE2955T 2 A tightly managed hFE parameter for improved dependability

DESCRIPTION Outstanding Safe Operating Area Collector Emitter Saturation Voltage VCE sat 1 1 V Max IC 4A For Surface Mount Applications Complement to Type MJD2955 DPAK Minimum lot to lot variability for dependable operation and strong device performance APPLICATIONS Designed for general purpose amplifier and slow switching applications

These silicon NPN power transistors made of plastic can be utilised as output or driver stages in switching regulators converters and power amplifiers as well as for general purpose power amplification and switching Features Quick switching times Extreme Frequency These devices are RoHS compliant Pb free halogen free and BFR free Benefits Consistent Performance at Greater Powers Symmetrical features in complementary arrangements Reproduction of Input Signal Accurately Enhanced Dynamic Range Wideband High Amplifier

We deal in All kinds Transistors like PNP or NPN These components are intended to be used in audio amplifiers as high frequency drivers Features Products with High Current Gain and Bandwidth Compact Package TO 220 These devices are RoHS compliant and Pb free

a TO 247 packaged 150V single channel power MOSFET The low RDS on and high current capabilities of the power MOSFET family are optimised For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features 1 Designed to be as widely available as possible through distribution partners 2 Product certification in accordance with JEDEC requirements 3 through hole power supply of standard in the industry 4 A strong rating

We deal in All kinds Transistors like PNP or NPN 250 VOLTS 250 WATTS 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS The MJ21193 PNP and MJ21194 NPN make use of perforated emitter technology and are especially made for linear applications high power audio output and disc head positioners Features Characterised with Total Harmonic Distortion

Power Transistors Surface Mount Applications DPAK The switching regulators converters and power amplifiers were designed for general purpose power and switching such as output or driver stages Features Plastic Sleeves with Lead Formed for Surface Mount Application The Straight Lead Version in Plastic Sleeves with the 1 Suffix Electrically Relative to the Well known D44H D45H Series Minimal Collector Emitter Saturation Voltage Quick switching times Complementary pairs make designs simpler Epoxy complies with UL 94 V 0 at 0 125 in AECQ101 Qualified and PPAP Capable NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These devices are RoHS compliant and free of pb halogens and BFRs

Fairchild's new line of trench IGBTs, which utilises novel trench IGBT technology, provides the best performance for PDP applications where low conduction and switching losses are crucial.


Features

• Abundant Current Capability

• Low saturation voltage: 40A @ IC = VCE(sat) = 1.03V

• Elevated input resistance

• Compliant with RoHS

Uses

PDP Framework

Motorola manufactures the silicon NPN VHF power transistor 2N5641. The transistor has an RF power of 7 watts and a transition frequency of 175 MHz. The specs of the 2N5641 are as follows:

1. NPN polarity

2. Maximum power dissipation (Pc) of the collector: 7 W

3. 65 volts is the maximum collector-base voltage (Vcb).

4. 35 volts is the maximum collector-emitter voltage (Vce).

5. Four V is the maximum emitter-base voltage (Veb).

6. One A is the maximum collector current (Ic max).

Using Doingter s planar stripe DMOS technology power field effect transistors with the DOPF 10N80C N Channel enhancement mode are created In the avalanche and commutation modes this cutting edge technology has been specifically designed to reduce on state resistance deliver greater switching performance and withstand high energy pulses These devices are particularly suited for active power factor correction high efficiency switching mode power supply and electronic light ballasts using a half bridge topology

We deal in All kinds Transistors like PNP or NPN We deal in all types of transistors such as PNP and NPN Silicon plastic power transistors that complement each other A high frequency driver is a component of audio amplifiers COMPLEMENTARY SILICON POWER TRANSISTORS 8 0 A 250 V 50 W Features Epoxy meets UL 94 V0 0 125 in High DC Current Gain High Current Gain Bandwidth Product TO220 Compact Package These devices are RoHS compliant and Pb free

The TIP31C is a base island technology NPN power transistor in a TO 220 plastic package It performs better than the industry standard TIP31C which qualifies it for use in switching audio and power linear applications TIP32C is the PNP type 1 Quick Switching 2 Improved Linearity with hFE 3 the hFE Grouping

GT50M101 is the part number for a discrete IGBT transistor made by Toshiba Semiconductor

We have all the below mentioned products available
BC548A        BC548B       BC548C  
BC549A         BC549B       BC549C
BC550A         BC550B       BC550C
BC556BTF      BC556ATA   BC556ABU
BC556BTFR    BC556BTA   BC557BTA
BC557ATA      BC557BTF   BC558A
BC558B         BC558C       BC559A
BC559B         BC559C       BC63916

Product XS4202 20Ampere,200Volt Insulated Fast Recovery Diode for Welding MachinePb
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current

We have TIP31C TIP32C TIP35C TIP41C TIP42C  also availabe in stock 

A line of bipolar junction transistors produced by Texas Instruments is referred to as Texas Instruments Power, more commonly known by the acronym TIP. Due to their simplicity, longevity, and usability, the series, debuted in the 1960s, is still in some usage today. The TIP04 and TIP14 part numbers are listed in a 1966 Texas Instruments catalogue.

WE HAVE FULL RANGE  of Bipolar Transistors - BJT NPN High Volt Power

The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package. It is intended for switching and industrial applications from single and three-phase mains.