Transistors
Our product range includes a wide range of bd139 power transistor, bc547 npn transistor, tps54231dr switching voltage regulator ic, but11 high volatge, high speed npn transistor, 2n5641 silicon npn vhf power transistor and 2n6027 unijunction transistor.
BD139 POWER TRANSISTOR
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₹ 2 / Piece Get Latest Price
Product Brochure
| Brand | CDIL , ONN, ST |
| Part Number | BD139 |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 1.25 W |
| Mounting Type | DIP |
| Packaging | Tube |
| Package/Case | SOT-32-3 |
| Transistor Type | NPN AND PNP |
We have the below mentioned products available:
BD139G BD139-10 BD135 BD135G
BD136 BD136G
BD139G BD139-10 BD135 BD135G
BD136 BD136G
BC547 NPN Transistor
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₹ .50 / Piece Get Latest Price
Product Brochure
| Transistor Type | NPN AND PNP |
| Brand | CDIL , ONN, ST |
| Part Number | BC547 |
| Maximum Operating Temperature | +150 C |
| Mounting Type | DIP |
| Package/Case | TO-92-3 Kinked Lead AND TO-92-3 |
BC547 has Power dissipation 500 mW
BC547 comes in Plastic case TO-92
Maximum Rating of BC547 is (TA = 25°C)
50V is the Collecter-Emitter-Voltage Of BC547 when E-B short, When B is open BC547 has Collecter-Emitter-Voltage of 45V and when E is open BC547 has 50V of Collecter-emitter-voltage.
The Emitter Base Voltage of BC547 is 5V. BC547 has collecter current capacity of 100mA. The Junction and storage temperature of BC547 is -55 C to +150C . BC547 has a reverse voltage transfer ration of typ. 2*10-4
BC547 comes in Plastic case TO-92
Maximum Rating of BC547 is (TA = 25°C)
50V is the Collecter-Emitter-Voltage Of BC547 when E-B short, When B is open BC547 has Collecter-Emitter-Voltage of 45V and when E is open BC547 has 50V of Collecter-emitter-voltage.
The Emitter Base Voltage of BC547 is 5V. BC547 has collecter current capacity of 100mA. The Junction and storage temperature of BC547 is -55 C to +150C . BC547 has a reverse voltage transfer ration of typ. 2*10-4
TPS54231DR Switching Voltage Regulator IC
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₹ 11 / Piece Get Latest Price
Product Brochure
| Number Of Pins | 8 Pins |
| Model Name/Number | TPS54231DR |
| Regulator Type | Switching Regulator |
| Brand | Texas Instrument |
| Mountig Style | SMD/SMT |
| Package/Case | SOIC-8 |
The TPS54231 device includes a low RDS(on) high-side MOSFET and is a 2-V, 2-A non-synchronous buck converter. An automated pulse skipping Eco-modeTM function is used to maximise efficiency at light loads. Moreover, battery-powered applications can utilise the device due to its 1-µA shutdown supply current. Utilising ceramic output capacitors is made possible by current mode control with internal slope compensation, which also makes external compensation computations easier and requires fewer components overall. The input undervoltage lockout's hysteresis is programmed using a resistor divider. Voltage overshoots during startup and transient situations are prevented by an overvoltage transient prevention circuit. When an overload scenario occurs, the device and the load are protected by a thermal shutdown, frequency foldback, and cycle-by-cycle current restriction mechanism.
BUT11 High Volatge, High Speed NPN Transistor
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₹ 10 / Piece Get Latest Price
Product Brochure
| Current | 5 A |
| Brand | On Semi |
| Transistor Polarity | NPN |
| Part Number | BUT11 / BUT11AN |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Voltage | 400V-800V |
| Maximum Operating Temperature | 160 C |
The BUT11 is an NPN power transistor with glass passivation and high voltage and speed. It is packaged in a TO-220AB package. These are its specifications:
1. Maximum Power Dissipation of the Collector: 100 W
2. 800 V is the maximum collector-base voltage.
3. 400 V is the maximum collector-emitter voltage.
4. 5 V is the maximum emitter-base voltage.
5. 5 A is the maximum collector current.
6. 160 °C is the maximum operating junction temperature.
1. Maximum Power Dissipation of the Collector: 100 W
2. 800 V is the maximum collector-base voltage.
3. 400 V is the maximum collector-emitter voltage.
4. 5 V is the maximum emitter-base voltage.
5. 5 A is the maximum collector current.
6. 160 °C is the maximum operating junction temperature.
2N5641 Silicon NPN VHF Power Transistor
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₹ 20 / Piece Get Latest Price
Product Brochure
| Current | 1 A |
| Brand | Motorolla |
| Transistor Polarity | NPN |
| Part Number | 2N5641 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Voltage | 35V - 65V |
| Maximum Operating Temperature | 200 C |
Motorola manufactures the silicon NPN VHF power transistor 2N5641. The transistor has an RF power of 7 watts and a transition frequency of 175 MHz. The specs of the 2N5641 are as follows:
1. NPN polarity
2. Maximum power dissipation (Pc) of the collector: 7 W
3. 65 volts is the maximum collector-base voltage (Vcb).
4. 35 volts is the maximum collector-emitter voltage (Vce).
5. Four V is the maximum emitter-base voltage (Veb).
6. One A is the maximum collector current (Ic max).
1. NPN polarity
2. Maximum power dissipation (Pc) of the collector: 7 W
3. 65 volts is the maximum collector-base voltage (Vcb).
4. 35 volts is the maximum collector-emitter voltage (Vce).
5. Four V is the maximum emitter-base voltage (Veb).
6. One A is the maximum collector current (Ic max).
2N6027 Unijunction Transistor
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₹ 10 / Piece Get Latest Price
Product Brochure
| Brand | ON |
| Part Number | 2N6027 UTC |
| Type | Leaded |
| Package | STANDARD |
| Current | STANDARD |
| Temperature | STANDARD |
| Voltage | STANDARD |
| Number Of Pins | 3 |
| I Deal In | New Only |
Minimum order quantity: 1000 Piece
2N6027 PBFREE 2N6027 APP PBFREE
2N6027 TRA TIN/LEAD 2N6027 TRA PBFREE
2N6027 APP TIN/LEAD 2N6027 TRB PBFREE
2N6027 TRB TIN/LEAD 2N6027 TRE PBFREE
2N6027 TIN/LEAD
Bipolar Transistors - BJT 40Vgkf 5.0Vgkr 40Vgar 40Vak 300mW
2N6027 TRA TIN/LEAD 2N6027 TRA PBFREE
2N6027 APP TIN/LEAD 2N6027 TRB PBFREE
2N6027 TRB TIN/LEAD 2N6027 TRE PBFREE
2N6027 TIN/LEAD
Bipolar Transistors - BJT 40Vgkf 5.0Vgkr 40Vgar 40Vak 300mW
2SC5200 Single Transistor
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₹ 60 / Piece Get Latest Price
Product Brochure
| Brand | TOSHIBA / DONGITER |
| Part Number | 2SC5200-O(Q) / 2SC5200N(S1,E,S) / 2SC5200-O(S1,F) / 2SC5200OTU / TTC5200 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Pin Count | Standard |
| Channel Type | N-CHANNEL |
Minimum order quantity: 1000 Piece
2SC5200-O(Q)/2SC5200N(S1,E,S)/2SC5200-O(S1,F)/2SC5200OTU
Bipolar Transistors
The bipolar transistor 2SC5200 NPN Transistor with 1.5V Base and 15V Collector Current is made up of two N-doped layers and a P-doped semiconductor layer (base). To create a large collector and emitter current, a tiny current that enters the base is amplified. They are utilised in radio frequency audio circuits, flip-flops, industrial controls, televisions and mobile phones.
Bipolar Transistors
The bipolar transistor 2SC5200 NPN Transistor with 1.5V Base and 15V Collector Current is made up of two N-doped layers and a P-doped semiconductor layer (base). To create a large collector and emitter current, a tiny current that enters the base is amplified. They are utilised in radio frequency audio circuits, flip-flops, industrial controls, televisions and mobile phones.
DOPF10N80C N-Channel Transistor
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₹ 25 / pieces Get Latest Price
| Channel Type | N Channel |
| Brand | DOINGTER |
| Part Number | DOPF10N80C |
| Transistor Type | NPN |
| Mounting Type | THROUGH HOLE |
| DATE CODE | 22+ |
Minimum order quantity: 100 pieces
Using Doingter s planar stripe DMOS technology power field effect transistors with the DOPF 10N80C N Channel enhancement mode are created In the avalanche and commutation modes this cutting edge technology has been specifically designed to reduce on state resistance deliver greater switching performance and withstand high energy pulses These devices are particularly suited for active power factor correction high efficiency switching mode power supply and electronic light ballasts using a half bridge topology
MJE15030 Power Transistors
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₹ 20 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER , ON SEMI |
| Part Number | MJE15030 |
| Mounting Type | DIP |
| PACKAGE | TO-220 |
| DATE CODE | 23+ |
Minimum order quantity: 100 pieces
For usage in high frequency drivers in audio amplifier applications the MJE15030 is a 150V NPN complementary power transistor 1 DC current gain at Ic 4A hfe 20 minimum 2 The minimum collector emitter sustaining voltage is 150V We deal in All kinds Transistors like PNP or NPN
K40T1202 IGBT TRANSISTOR
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₹ 175 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER / INFINEON |
| Part Number | K40T1202 / IKW40N120T2 |
| Mounting Type | THROUGH HOLE |
| PACKAGE | TO-247 |
| DATE CODE | 23+ |
Minimum order quantity: 100 pieces
IGBT in TRENCHSTOPTM 2nd generation with soft, quick recovery anti-parallel controlled diode
TOP OF THE CLASS FOR TO247
10s is the short circuit withstand time.
Designed with:
- Converters of Frequencies
- Constant Power Source
For 1200 V applications, the 2nd generation TRENCHSTOPTM offers:
A relatively close distribution of parameters
- strong resilience and temperature stability
Because to the positive temperature coefficient in VCE(sat), easy paralleling capability is achieved.
Minimal EMI
Minimal Gate Fee
Extremely soft, quick-recovery anti-parallel HE diode controlled by an emitter
JEDEC1 qualifies for the intended uses
TOP OF THE CLASS FOR TO247
10s is the short circuit withstand time.
Designed with:
- Converters of Frequencies
- Constant Power Source
For 1200 V applications, the 2nd generation TRENCHSTOPTM offers:
A relatively close distribution of parameters
- strong resilience and temperature stability
Because to the positive temperature coefficient in VCE(sat), easy paralleling capability is achieved.
Minimal EMI
Minimal Gate Fee
Extremely soft, quick-recovery anti-parallel HE diode controlled by an emitter
JEDEC1 qualifies for the intended uses
TIP3055 Power Transistor
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₹ 29 / pieces Get Latest Price
Product Brochure
| Brand | Doingter, Onsemi |
| Part Number | TIP3055 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Package | TO-247 |
Through hole complementary power transistor in TO 247 package TIP3055 from STMicroelectronics This device is made using epitaxial base planar technology and is appropriate for switching general purpose and power linear applications 1 At 100 ohm RBE the collector to emitter voltage Vce is 70V 2 15A is the collector current Ic 3 90W is the power dissipation Pd 4 A collector current of 10A and a collector to emitter saturation voltage of 3V 5 DC collector current gain hFE of 5 at 10A 6 A 150 C operating junction temperature range
MJD3055 NPN Power Transistor
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₹ 6.5 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER, ST MICROELECTRONICS & OTHER BRANDS ALSO AVAIALBLE |
| Part Number | MJD3055 |
| Transistor Type | NPN |
| PACKAGE | TO-252 |
| DATE CODE | 22+ |
Minimum order quantity: 100 pieces
DESCRIPTION Outstanding Safe Operating Area Collector Emitter Saturation Voltage VCE sat 1 1 V Max IC 4A For Surface Mount Applications Complement to Type MJD2955 DPAK Minimum lot to lot variability for dependable operation and strong device performance APPLICATIONS Designed for general purpose amplifier and slow switching applications
TIP41C NPN Power Transistor
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₹ 6 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER, ST & OTHER BRANDS ALSO AVAILABLE |
| Part Number | TIP41C |
| Transistor Type | NPN |
| Mounting Type | DIP |
| DATE CODE | 23+ |
| PACKAGE | TO-220 |
Minimum order quantity: 100 pieces
The TIP41C is an NPN power transistor with base island technology that comes in a TO 220 plastic box It may be used for switching power linear and audio applications TIP42C is the complementary PNP type A plastic power transistor called the TIP41C is made for switching and amplifier applications 100V for the collector emitter voltage and 65W for the collector dissipation 0 6 seconds for turn on A 1 4 second turn off delay
DOP44H11 NPN Power Transistor
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₹ 20 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER, ONSEMI & OTHER BRANDS ALSO AVAIALBLE |
| Part Number | DOP44H11 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| PACKAGE | TO-220 |
| DATE CODE | 23+ |
Minimum order quantity: 100 pieces
These silicon NPN power transistors made of plastic can be utilised as output or driver stages in switching regulators converters and power amplifiers as well as for general purpose power amplification and switching Features Quick switching times Extreme Frequency These devices are RoHS compliant Pb free halogen free and BFR free Benefits Consistent Performance at Greater Powers Symmetrical features in complementary arrangements Reproduction of Input Signal Accurately Enhanced Dynamic Range Wideband High Amplifier
DOG50G60 N-Channel Transistor
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₹ 115 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER, ADVANCE POWER ELECTRONICS & OTHER BRANDS ALSO AVAILABLE |
| Part Number | DOG50G60 / 50G60 |
| Mounting Type | DIP |
| DATE CODE | 23+ |
| PACKAGE | TO-247 |
Minimum order quantity: 100 pieces
Insulated Gate N Channel Bipolar Transistor Features Switching at High Speed Saturation Voltage Is Low Type VCE sat 2 5V IC 40A Halogen and RoHS Compliant Free
IRF740 N-Channel Transistor
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₹ 10 / Piece Get Latest Price
Product Brochure
| Brand | Doingter, Vishay |
| Part Number | IRF740N |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Package | TO-220 |
| Date Code | 23+ |
Minimum order quantity: 100 Piece
IRF740 is a class of planar DMOS N Channel enhancement mode power field effect transistors In the avalanche and commutation modes this cutting edge technology has been specifically designed to reduce on state resistance deliver greater switching performance and withstand high energy pulses These gadgets are ideal for half bridge based electronic light ballasts and high efficiency switch mode power supply
IRFP4568 N-Channel Power Mosfet
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₹ 150 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER, INFINEON & OTHER BRANDS ALSO AVAIALBLE |
| Part Number | IRFP4568 |
| Mounting Type | DIP |
| PACKAGE | TO-3P |
| DATE CODE | 21+ |
Minimum order quantity: 100 pieces
a TO 247 packaged 150V single channel power MOSFET The low RDS on and high current capabilities of the power MOSFET family are optimised For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features 1 Designed to be as widely available as possible through distribution partners 2 Product certification in accordance with JEDEC requirements 3 through hole power supply of standard in the industry 4 A strong rating
MJ21193 Power Transistor
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₹ 150 / pieces Get Latest Price
Product Brochure
| Brand | Doingter, Onsemi |
| Part Number | MJ21193 |
| Transistor Type | PNP |
| Mounting Type | DIP |
| Package/Case | TO-204-2 |
Minimum order quantity: 100 pieces
We deal in All kinds Transistors like PNP or NPN 250 VOLTS 250 WATTS 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS The MJ21193 PNP and MJ21194 NPN make use of perforated emitter technology and are especially made for linear applications high power audio output and disc head positioners Features Characterised with Total Harmonic Distortion Excessive DC Current Gain Outstanding Gain Linearity Large SOA These devices are RoHS compliant and Pb free
MJ21194 Power Transistor
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₹ 150 / pieces Get Latest Price
Product Brochure
| Brand | Doingter, Onsemi |
| Part Number | MJ21194G |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Package | TO-204-2 |
Minimum order quantity: 100 pieces
We deal in All kinds Transistors like PNP or NPN 250 VOLTS 250 WATTS 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS The MJ21193 PNP and MJ21194 NPN make use of perforated emitter technology and are especially made for linear applications high power audio output and disc head positioners Features Characterised with Total Harmonic Distortion
MJE15031 Power Transistor
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₹ 20 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER , ON SEMI |
| Part Number | MJE15031 |
| Mounting Type | DIP |
| DATE CODE | 23+ |
| PACKAGE | TO-220 |
Minimum order quantity: 100 pieces
We deal in All kinds Transistors like PNP or NPN These components are intended to be used in audio amplifiers as high frequency drivers Features Products with High Current Gain and Bandwidth Compact Package TO 220 These devices are RoHS compliant and Pb free
DOP45H11 PNP Power Transistor
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₹ 20 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER, ONSEMI AND OTHER BRANDS ALSO AVAIALBLE |
| Part Number | DOP45H11 / P45H11 |
| Transistor Type | PNP |
| Mounting Type | DIP |
| DATE CODE | 23+ |
| PACKAGE | TO-220 |
Minimum order quantity: 100 pieces
Power Transistors Surface Mount Applications DPAK The switching regulators converters and power amplifiers were designed for general purpose power and switching such as output or driver stages Features Plastic Sleeves with Lead Formed for Surface Mount Application The Straight Lead Version in Plastic Sleeves with the 1 Suffix Electrically Relative to the Well known D44H D45H Series Minimal Collector Emitter Saturation Voltage Quick switching times Complementary pairs make designs simpler Epoxy complies with UL 94 V 0 at 0 125 in AECQ101 Qualified and PPAP Capable NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These devices are RoHS compliant and free of pb halogens and BFRs
IRG4PC50U UltraFast Speed IGBT
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₹ 200 / Piece Get Latest Price
Product Brochure
| Brand | International Rectifier |
| Part Number | IRG40PC50U / IRG4PC50U |
| Mounting Type | DIP |
| Voltage | 600V |
| Pin Count | 3 |
Features
• UltraFast: Designed to function at high frequencies In hard switching, 8–40 kHz; in resonant mode, >200 kHz
• Compared to Generation 3, Generation 4 IGBT architecture offers tighter parameter distribution and improved efficiency.
• TO-247AC packaging, which is industry standard
Advantages
• The maximum efficiency available is offered by Generation 4 IGBTs.
• IGBTs that are tailored for particular application scenarios
• Designed to be a "drop-in" replacement for comparable Generation 3 IR IGBTs that are industry standard.
• UltraFast: Designed to function at high frequencies In hard switching, 8–40 kHz; in resonant mode, >200 kHz
• Compared to Generation 3, Generation 4 IGBT architecture offers tighter parameter distribution and improved efficiency.
• TO-247AC packaging, which is industry standard
Advantages
• The maximum efficiency available is offered by Generation 4 IGBTs.
• IGBTs that are tailored for particular application scenarios
• Designed to be a "drop-in" replacement for comparable Generation 3 IR IGBTs that are industry standard.
Onsemi FGA180N33AT Transistor IGBT
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₹ 10 / Piece Get Latest Price
Product Brochure
| Brand | Onsemi |
| Part Number | FGA180N33AT |
| Mounting Type | DIP |
| Voltage | 330V |
| Pin Count | 3 |
Fairchild's new line of trench IGBTs, which utilises novel trench IGBT technology, provides the best performance for PDP applications where low conduction and switching losses are crucial.
Features
• Abundant Current Capability
• Low saturation voltage: 40A @ IC = VCE(sat) = 1.03V
• Elevated input resistance
• Compliant with RoHS
Uses
PDP Framework
Features
• Abundant Current Capability
• Low saturation voltage: 40A @ IC = VCE(sat) = 1.03V
• Elevated input resistance
• Compliant with RoHS
Uses
PDP Framework
GT50M101 Silicon N-Channel IGBT Transistor
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₹ 126 / Piece Get Latest Price
Product Brochure
| Brand | Toshiba |
| Part Number | GT50M101 |
| Mounting Type | DIP |
| Pin Count | 3 |
| Channel Type | N-Channel |
GT50M101 is the part number for a discrete IGBT transistor made by Toshiba Semiconductor
MJE3055T NPN Transistor
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₹ 6.5 / pieces Get Latest Price
Product Brochure
| Brand | DOINGTER , OTHER BRANDS ALSO AVAILABLE |
| Part Number | MJE3055T |
| Transistor Type | NPN |
| Mounting Type | DIP |
| PACKAGE | TO-220 |
| DATE CODE | 23+ |
Minimum order quantity: 100 pieces
A silicon epitaxial base NPN transistor in a Jedec TO 220 packaging is the MJE3055T It is designed for general purpose amplifiers and power switching circuits MJE2955T is the complimentary PNP type 1 Used in conjunction with the MJE2955T 2 A tightly managed hFE parameter for improved dependability
GT8G101 Silicon N Channel Mosfet
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₹ 100 / Piece Get Latest Price
Product Brochure
| Brand | Generic |
| Part Number | GT8G101 |
| Mounting Type | DIP |
| Current | 8 A |
| Maximum Power Dissipation | 20W |
| Pin Count | 3 |
Toshiba Semiconductor produces an N-channel MOS type transistor called the GT8G101. This discrete IGBT is capable of withstanding pulses of 400 V and 130 A.
MJE15032 Power Transistor
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₹ 20 / pieces Get Latest Price
| Brand | DOINGTER |
| Part Number | MJE15032 |
| Mounting Type | DIP |
| PACKAGE | TO-220 |
| DATE CODE | 22+ |
Minimum order quantity: 100 pieces
We deal in All kinds Transistors like PNP or NPN We deal in all types of transistors such as PNP and NPN Silicon plastic power transistors that complement each other A high frequency driver is a component of audio amplifiers COMPLEMENTARY SILICON POWER TRANSISTORS 8 0 A 250 V 50 W Features Epoxy meets UL 94 V0 0 125 in High DC Current Gain High Current Gain Bandwidth Product TO220 Compact Package These devices are RoHS compliant and Pb free
MJE15033 Power Transistor
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₹ 20 / pieces Get Latest Price
| Brand | DOINGTER |
| Part Number | MJE15033 |
| Mounting Type | DIP |
| PACKAGE | TO-220 |
| DATE CODE | 22+ |
Minimum order quantity: 100 pieces
We deal in All kinds Transistors like PNP or NPN We deal in all types of transistors such as PNP and NPN Silicon plastic power transistors that complement each other A high frequency driver is a component of audio amplifiers COMPLEMENTARY SILICON POWER TRANSISTORS 8 0 A 250 V 50 W Features Epoxy meets UL 94 V0 0 125 in High DC Current Gain High Current Gain Bandwidth Product TO220 Compact Package These devices are RoHS compliant and Pb free
2N6292 NPN Transistor
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₹ 5.6 / pieces Get Latest Price
| Brand | Doingter & OTHER BRANDS ALSO AVAIALBLE |
| Part Number | 26292 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| DATE CODE | 22+ |
| PACKAGE | TO-220 |
Minimum order quantity: 100 pieces
A silicon NPN transistor with a TO 220 style packaging the 2N6292 is intended for use in switching and general purpose amplifier applications Features Specific DC Current Gain to 7 Amps IC 7A hFE 2 3 Min VCEO sus 70V Min High for the Collector Emitter Sustaining Voltage Product of Current Gain and Bandwidth fT 4MHz Min IC 500mA
MJE2955T PNP Power Transistor
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₹ 6.5 / pieces Get Latest Price
| Brand | DOINGTER |
| Part Number | MJE2955T |
| Mounting Type | DIP |
| PACKAGE | TO-220 |
| DATE CODE | 22+ |
Minimum order quantity: 100 pieces
The MJE2955T is a hermetically sealed metal box that holds a general purpose PNP power transistor with an epitaxial base The goal of this gadget is to serve as a switching and amplifier device all around Feature MJE2955T 1 DC A maximum of 10 amps is given for current gain 2 High Current Gain Bandwidth 3 MJE2955T Type Designator Product 2 0 MHz Min at 500 mAdc for the IC 4 PNP for Si Polarity Transistor Material 5 5 V is the maximum Emitter Base Voltage
TIP31C NPN Power Transistor
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₹ 6 / pieces Get Latest Price
| Brand | DOINGTER |
| Part Number | TIP31C |
| Transistor Type | NPN |
| Mounting Type | DIP |
| DATE CODE | 23+ |
| PACKAGE | TO-220 |
Minimum order quantity: 100 pieces
The TIP31C is a base island technology NPN power transistor in a TO 220 plastic package It performs better than the industry standard TIP31C which qualifies it for use in switching audio and power linear applications TIP32C is the PNP type 1 Quick Switching 2 Improved Linearity with hFE 3 the hFE Grouping
BC640 Bipolar Transistor
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₹ 5 / Piece Get Latest Price
Product Brochure
| Transistor Type | NPN AND PNP |
| Brand | CDIL , ONN, ST |
| Part Number | BC640 |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 625 mW |
| Mounting Type | DIP |
| Package/Case | TO-92-3 Kinked Lead AND TO-92-3 |
| Packaging | Ammo Pack |
We have all the below mentioned products available
BC548A BC548B BC548C
BC549A BC549B BC549C
BC550A BC550B BC550C
BC556BTF BC556ATA BC556ABU
BC556BTFR BC556BTA BC557BTA
BC557ATA BC557BTF BC558A
BC558B BC558C BC559A
BC559B BC559C BC63916
BC548A BC548B BC548C
BC549A BC549B BC549C
BC550A BC550B BC550C
BC556BTF BC556ATA BC556ABU
BC556BTFR BC556BTA BC557BTA
BC557ATA BC557BTF BC558A
BC558B BC558C BC559A
BC559B BC559C BC63916
2SA1943(Q) Bipolar Transistors
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Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
The entire series of TTA1943 is available at bets prices
₹ 32 / Piece Get Latest Price
Product Brochure
| Brand | Doingter |
| Part Number | TTA1943 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Pin Count | 3 |
Minimum order quantity: 1000 Piece
Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
The entire series of TTA1943 is available at bets prices
XS4202 Fast Recovery Diode
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₹ 24 / Piece Get Latest Price
Product Brochure
| Brand | Import |
| Part Number | XS4202 |
| Maximum Operating Temperature | +150 C |
Minimum order quantity: 1000 Piece
Product XS4202 20Ampere,200Volt Insulated Fast Recovery Diode for Welding MachinePb
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
BUV48A Bi-polar Transistor
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₹ 60 / Piece Get Latest Price
Product Brochure
| Brand | ST / PHILPS/ |
| Part Number | BUV48A |
| Transistor Type | NPN |
| Mounting Type | SMD |
| Maximum Operating Temperature | +150 C |
| Pin Count | 3 |
| Maximum DC Collector Current | 15A |
| Pd - Power Dissipation | 125 W |
Minimum order quantity: 1000 Piece
WE HAVE FULL RANGE of Bipolar Transistors - BJT NPN High Volt Power
The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package. It is intended for switching and industrial applications from single and three-phase mains.
The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package. It is intended for switching and industrial applications from single and three-phase mains.
ULN2003 Darlington Transistor
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₹ 7 / Piece Get Latest Price
Product Brochure
| Configuration | Array 7 |
| Brand | STMicroelectronics |
| Part Number | ULN2003A |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Pin Count | 16 |
| Package | PDIP-16 |
Seven open collector Darlington pairs with common emitters are included in each of the high-voltage, high-current Darlington arrays known as ULN2001, ULN2002, ULN2003, and ULN2004. Each channel is capable of withstanding peak currents of 600 mA and is rated at 500 mA. For inductive load driving, suppression diodes are added, and the inputs are pinned opposite the outputs to simplify board layout.
TL082CDT Operational Amplifiier
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₹ 10 / Piece Get Latest Price
Product Brochure
| Number of Channels | 2 |
| Brand | STMicroelectronics |
| Package/Case | SOIC-8 |
| Amplifier Type | General Purpose Amplifier |
| Product Type | Op Amps - Operational Amplifiers |
High-speed JFET input dual operational amplifiers, including bipolar transistors and well-matched, high-voltage JFETs in a monolithic integrated circuit, include the TL082, TL082A, and TL082B. The devices have low input bias and offset current, low offset voltage temperature coefficient, and high slew rates.
BUL213 NPN Bipolar Junction Power Transistor
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₹ 18 / Piece Get Latest Price
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| Mounting Type | DIP |
| Brand | STMicroelectronics |
| Part Number | BUL213 |
| Current | 3A |
| Maximum Power Dissipation | 60W |
| Package | TO-220-3 |
| Product Category | Bipolar Transistors - BJT |
STMicroelectronics produces the BUL213 bipolar junction transistor (BJT) NPN power transistor. It is intended for use in lighting applications and low-cost switch-mode power supply. great voltage Multiepitaxial Mesa technology is used in the construction of the BUL213 to provide great performance at a reasonable cost. Its Hollow Emitter structure is another feature that enhances switching rates. The BUL213 can manage 3 amps and 60 watts and has a collector-emitter voltage of up to 600 volts.
BSW68 SILICON PLANAR EPITAXIAL NPN Transistor
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| Part Number | BSW68 |
| Transistor Type | NPN |
| Mounting Type | DIP |
| Current | 2A |
| Voltage | 6V |
| Maximum Operating Temperature | 200 C |
| Pin Count | 3 |
| Package | TO-39 |
Part of the BSW series, the BSW68 is an NPN bipolar junction transistor with 1 A, 150 V, THT, and TO characteristics. With a maximum voltage of 150 V and an amperage of 1 A, it is a through-hole transistor. This high voltage NPN transistor is perfect for industrial applications, general-purpose switching, and amplification.
MJ4031 Darlingtor Transistor
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₹ 100 / Piece Get Latest Price
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| Brand | Central Semiconductor |
| Part Number | MJ4031 PBFREE |
| Transistor Type | PNP |
| Mounting Type | DIP |
| Current | 16A |
A medium-power silicon transistor, the MJ4031 is intended for use in amplifier and general-purpose switching applications. With an integrated base-emitter shunt resistor and a monolithic design, it offers high gain Darlington performance. It has four maximum voltages: 80 V for the collector-base, 80 V for the collector-emitter, and 5 V for the emitter-base. The maximum collector power dissipation is 150 W. Additionally, it has a forward current transfer ratio (hFE) of at least 2000 and a maximum collector current of 16 A.
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