Power Mosfets

Vishay's third generation power MOSFETs offer the optimum balance of quick switching, durable device design, low on-resistance, and affordability for the designer. For all commercial and industrial applications with power dissipation levels up to about 50 W, the TO-220AB package is always preferable. The TO-220AB's significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging.

A TO 220AB sized 30V N channel power MOSFET Benefits 1 Designed to maximise distribution partners reach 2 Product certification in accordance with JEDEC requirements 3 5V gate drive voltage optimised 4 The through hole power package is the industry standard 5 A package with high current carrying capacity

This Power MOSFET series was created using a special method developed by Doingter and it was particularly created to reduce gate charge and input capacitance Therefore it may be used as the principal switch in modern high efficiency isolated DC DC converters for applications in computers and telecom Additionally any application with minimal gate charge drive needs is suitable for it Features 1 Outstanding dv dt capabilities 2 An in depth avalanche test 3 Object based characterization for applications

Doingter s s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

a TO 247 packaged 100V single N Channel power MOSFET The low RDS on and high current capabilities of the power MOSFET family are optimised For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features 1 Designed to be as widely available as possible through distribution partners 2 Product certification in accordance with JEDEC requirements 3 through hole power supply of standard in the industry 4 A strong rating

A high voltage power MOSFET called the DOPF 14N65 combines advanced trench MOSFET to have improved features including quick switching times low gate charges low on state resistance and high robust avalanche properties The majority of the time switching power supplies and adaptors employ this power MOSFET in high speed switching applications

The TO 247 package contains a 100V single P channel power MOSFET The IR MOSFET series of power MOSFETs uses tried and true silicon manufacturing techniques to provide designers a large selection of products to serve a variety of applications including DC motors inverters SMPS lights load switches and battery powered ones For convenience of design the devices are offered in a range of surface mount and through hole packages with those footprints Features Synopsis Planar cell structure for extensive SOA Optimised for widest availability from distribution partners JEDEC compliant product qualification Through hole power package that is industry standard with silicon optimised for switching below 100 kHz high rating right now Benefits heightened toughness Industry standard certification level broad availability via distribution partners Exceptional performance in low frequency applications

Doingter s s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

Doingter s s third generation Power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For commercial and industrial applications where TO 220AB devices cannot be used due to greater power levels the TO 247AC package is chosen Because of its isolated mounting hole the TO 247AC is comparable to the older TO 218 package but is better In order to satisfy the criteria of the majority of safety regulations it also offers higher creepage distances between pins

In order to produce incredibly low on resistance per silicon area this HEXFET Power MOSFET makes use of the most recent manufacturing methods This design also has better repeating avalanche rating a 175 C junction working temperature and quick switching times These characteristics work together to provide a very effective and dependable design that may be used in a broad range of additional applications

A TO 220 packaged 75V single N channel StrongIRFETTM power MOSFET The StrongIRFETTM power MOSFET series is designed for high current capability and low RDS on For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio Overview of Features Typical through hole power supply Silicon optimised for applications switching at a frequency below 100 kHz high current rating product validation according to JEDEC standard Wider portfolio available body diodes are softer than those made with older silicon generations Benefits Drop in replacement is possible with standard pinout Package with high current carrying capacity Industry required educational level superior efficiency in low frequency applications Higher power density

Vishay s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

The third generation IRF640 power MOSFETs offer the optimum balance of quick switching ruggedized device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 150 W the TO 220AB package is always preferable

Doingter s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer For all commercial and industrial applications with power dissipation levels up to about 50 W the TO 220AB package is always preferable The TO 220AB is widely used in the industry because to its low thermal resistance and affordable packaging

A TO 220 packaged 100V single N Channel power MOSFET The StrongIRFETTM power MOSFET series is designed for high current capability and low RDS on For low frequency applications that need performance and robustness the devices are perfect A wide range of applications such as DC motors battery management systems inverters and DC DC converters are covered by the extensive portfolio

Utilising the most recent manufacturing methods this Stripe Planar design of HEXFET Power MOSFETs achieves incredibly low on resistance per silicon area The 175 C junction operating temperature quick switching and increased repeating avalanche rating of this HEXFET power MOSFET are further characteristics These advantages work together to make this design a very effective and dependable tool for usage in a range of applications

IRF1407 is This Stripe Planar design of HEXFET Power MOSFETs specifically created for Automotive applications makes use of the most recent processing processes to produce incredibly low on resistance per silicon area The 175 C junction operating temperature quick switching and increased repeating avalanche rating of this HEXFET power MOSFET are further characteristics Together these advantages make this design a very effective and dependable tool for use in a range of applications including automotive ones

Doingter s s third generation power MOSFETs give designers the finest possible blend of quick switching durable device design low on resistance and affordability At power dissipation levels of up to 50 W the TO 220AB package is consistently selected for all commercial and industrial applications The TO 220AB s widespread adoption within the industry is a result of its low thermal resistance and affordable packaging

Doingter s third generation power MOSFETs offer the optimum balance of quick switching durable device design low on resistance and affordability for the designer At power dissipation levels up to around 50 W the TO 220AB package of the IRFZ48 is widely recommended for all commercial and industrial applications The TO 220AB s significant use in the industry can be attributed in part to its low thermal resistance and affordable packaging

With the component number DOPF 4N65 the 4N65 is a high voltage power MOSFET from Doingter that is made to have improved properties including quick switching times low gate charges low on state resistance and strong avalanche resistance The 4N65 power MOSFET is often utilised in bridge circuits high efficiency DC to DC converters power supply and PWM motor controllers for high speed switching applications